Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
US7429538B2 · kind B2 · utility
8Cited by
13References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | May 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial pressure of oxygen at a first temperature. The silicon oxynitride film is then annealed in a second ambient comprising a second partial pressure of oxygen at a second temperature. The second partial pressure of oxygen is greater than the first partial pressure of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.