Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US7430135B2 · kind B2 · utility
157Cited by
48References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | Aug 28, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.