Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same
US7432164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Oct 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A method for making a semiconductor device includes providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type. The method further includes forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region. The method further includes forming a metal-containing gate layer over at least a portion of the dielectric layer overlying the first substrate region. The method further includes introducing dopants into at least a portion of the first substrate region through the metal-containing gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.