Method of forming a dual damascene structure utilizing a developable anti-reflective coating
US7432191B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | May 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.