Integrated circuit comprising an active optical device having an energy band engineered superlattice
US7432524B2 · kind B2 · utility
107Cited by
33References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2004 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Jan 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.