Robert John Stephenson
50Patents
27h-index
29Co-inventors
88Inventor score
Filing activity: Sep 13, 1995 → Mar 14, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7517702B2 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment | Electricity | 117 | Active |
| US7446002B2 | Method for making a semiconductor device comprising a superlattice dielectric interface layer | Electricity | 115 | Expired |
| US7153763B2 | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing | Emerging Cross-Sectional Technologies | 109 | Expired |
| US7700447B2 | Method for making a semiconductor device comprising a lattice matching layer | Electricity | 109 | Active |
| US7880161B2 | Multiple-wavelength opto-electronic device including a superlattice | Emerging Cross-Sectional Technologies | 109 | Active |
| US7227174B2 | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction | Electricity | 108 | Expired |
| US7045813B2 | Semiconductor device including a superlattice with regions defining a semiconductor junction | Electricity | 107 | Expired |
| US7045377B2 | Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction | Electricity | 107 | Expired |
| US7279699B2 | Integrated circuit comprising a waveguide having an energy band engineered superlattice | Electricity | 107 | Expired |
| US7229902B2 | Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction | Electricity | 107 | Expired |
| US7432524B2 | Integrated circuit comprising an active optical device having an energy band engineered superlattice | Electricity | 107 | Expired |
| US7109052B2 | Method for making an integrated circuit comprising a waveguide having an energy band engineered superlattice | Electricity | 107 | Expired |
| US7446334B2 | Electronic device comprising active optical devices with an energy band engineered superlattice | Electricity | 107 | Expired |
| US7718996B2 | Semiconductor device comprising a lattice matching layer | Electricity | 106 | Active |
| US8389974B2 | Multiple-wavelength opto-electronic device including a superlattice | Emerging Cross-Sectional Technologies | 106 | Active |
| US7863066B2 | Method for making a multiple-wavelength opto-electronic device including a superlattice | Emerging Cross-Sectional Technologies | 106 | Active |
| US9558939B1 | Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source | Electricity | 98 | Active |
| US6346197B1 | Water and wastewater treatment system and process for contaminant removal | Chemistry; Metallurgy | 66 | Expired |
| US10109479B1 | Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice | Electricity | 65 | Active |
| US10566191B1 | Semiconductor device including superlattice structures with reduced defect densities | Electricity | 42 | Active |
| US10468245B2 | Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice | Electricity | 41 | Active |
| US6663783B2 | Electrochemical cell for removing contaminants from a wastewater stream | Chemistry; Metallurgy | 34 | Expired |
| US10777451B2 | Semiconductor device including enhanced contact structures having a superlattice | Electricity | 27 | Active |
| US10727049B2 | Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice | Electricity | 27 | Active |
| US10811498B2 | Method for making superlattice structures with reduced defect densities | Electricity | 27 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.