Determination of lithography misalignment based on curvature and stress mapping data of substrates
US7433051B2 · kind B2 · utility
15Cited by
5References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2007 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Apr 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are methods to be carried out prior to, while, and/or after performing a photolithographic process to a wafer that involve wafer misalignment assessment. The method involves obtaining curvature and/or deformation information of a surface of the wafer over a plurality of locations so as to obtain a curvature map of the wafer. The curvature map is processed to obtain a stress map of the wafer. The stress map is used to determine displacement of a layer of the wafer. The displacement information is used to determine a degree of misalignment in the photolithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.