Scatterometry metrology using inelastic scattering
US7433056B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/653
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.