Method for manufacturing silicon single crystal, and silicon wafer
US7435294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Mar 31, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitrogen and/or carbon in the crystal. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily sliced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.