Patent · US Active

Supplying voltage to a bit line of a memory device

US7436721B2 · kind B2 · utility

2Cited by

1References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Lehmann · Poughkeepsie, US
Yannick Martelloni · Poing, DE
Devesh Dwivedi · Bengaluru, IN
Siddharth Gupta · San Bruno, US

Key dates

Filing date	Sep 26, 2006
Grant date	Oct 14, 2008
Priority date	—
Expiry date	Feb 16, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C17/12
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method supplies voltage to a bit line of a memory device. The method includes precharging, with a precharging device, the bit line to an output potential, deactivating the precharging device during a read action related to the bit line, reading, during the read action, an information via the bit line, and routing, during the read action, a virtual voltage supply line to a supply potential of the memory device to supply voltage to memory cells of the memory device assigned to the bit line. The precharging device of the bit line is activated/deactivated as a function of the potential of the virtual voltage supply line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.