Contact structure for a stack DRAM storage capacitor

US7439125B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Tegen · Dresden, DE
• Klaus Muemmler · Dresden, DE

Key dates

• Filing date: May 24, 2006
• Grant date: Oct 21, 2008
• Expiry date: Sep 21, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0335
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a contact structure for a stack storage capacitor includes forming the contact structure in a node contact region with contact openings, an insulating liner and a conductive filling material prior to the patterning of bit lines.