Patent · US Expired

Apparatus and method of forming silicide in a localized manner

US7439168B2 · kind B2 · utility

2Cited by

7References

12Claims

0Family size

Assignee

DCG Systems, Inc. · US

Inventors

Christian Boit · Berlin, DE
Theodore Lundquist · Milpitas, US
Chun-Cheng Tsao · Cupertino, US
Uwe Kerst · Berlin, DE
Stephan Schoemann · Freising, DE
Peter Sadewater · Berlin, DE

Key dates

Filing date	Oct 12, 2004
Grant date	Oct 21, 2008
Priority date	—
Expiry date	Oct 19, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31749
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.