III-nitride semiconductor device with trench structure
US7439555B2 · kind B2 · utility
7Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Dec 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.