PIN photodiode structure and fabrication process for reducing dielectric delamination

US7439599B2 · kind B2 · utility

Assignee

• EMCORE CORPORATION · US

Inventors

• Xiang Gao · San Jose, US
• Alex Ceruzzi · Princeton Junction, US
• Steve Schwed · Bound Brook, US
• Linlin Liu · Fryeburg, US
• Mark Gottfried · Fryeburg, US

Key dates

• Filing date: Mar 14, 2005
• Grant date: Oct 21, 2008
• Expiry date: Nov 3, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/223

Abstract

A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.