Apparatus with alternating read mode
US7440324B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Dec 29, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storage element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other charge storing elements). To account for this coupling, the read process for a targeted memory cell will provide compensation to an adjacent memory cell (or other memory cell) in order to reduce the coupling effect that the adjacent memory cell has on the targeted memory cell. The compensation applied is based on a condition of the adjacent memory cell. To apply the correct compensation, the read process will at least partially intermix read operations for the adjacent memory cell with read operations for the targeted memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.