Adaptive correlation of pattern resist structures using optical metrology
US7440881B2 · kind B2 · utility
4Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Aug 2, 2004 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Apr 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.