Anneal of ruthenium seed layer to improve copper plating
US7442267B1 · kind B1 · utility
15Cited by
13References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | May 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.