Self-aligned structure and method for confining a melting point in a resistor random access memory
US7442603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Oct 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying the substrate body, a programmable resistive memory material overlying the first conductive material, a high selective material overlying the programmable resistive memory material, and a silicon nitride material overlying the high selective material. The high selective material in the pillar is isotropically etched on both sides of the high selective material to create a void on each side of the high selective material with a reduced length. A programmable resistive memory material is deposited in a confined area previously occupied by the reduced length of the poly, and the programmable resistive memory material is deposited into an area previously occupied by the silicon nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.