ChiaHua Ho
66Patents
13h-index
18Co-inventors
77Inventor score
Filing activity: May 14, 2003 → Oct 8, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7608848B2 | Bridge resistance random access memory device with a singular contact structure | Electricity | 272 | Active |
| US7697316B2 | Multi-level cell resistance random access memory with metal oxides | Electricity | 264 | Active |
| US7586778B2 | Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | Physics | 256 | Active |
| US7560337B2 | Programmable resistive RAM and manufacturing method | Electricity | 42 | Active |
| US7020009B2 | Bistable magnetic device using soft magnetic intermediary material | Physics | 26 | Expired |
| US8111541B2 | Method of a multi-level cell resistance random access memory with metal oxides | Electricity | 23 | Active |
| US7605079B2 | Manufacturing method for phase change RAM with electrode layer process | Electricity | 22 | Active |
| US7800094B2 | Resistance memory with tungsten compound and manufacturing | Physics | 21 | Active |
| US7923285B2 | Method for forming self-aligned thermal isolation cell for a variable resistance memory array | Electricity | 18 | Active |
| US8106376B2 | Method for manufacturing a resistor random access memory with a self-aligned air gap insulator | Electricity | 16 | Active |
| US7816661B2 | Air cell thermal isolation for a memory array formed of a programmable resistive material | Electricity | 16 | Active |
| US7442603B2 | Self-aligned structure and method for confining a melting point in a resistor random access memory | Electricity | 14 | Active |
| US7388771B2 | Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | Physics | 13 | Active |
| US8129706B2 | Structures and methods of a bistable resistive random access memory | Electricity | 13 | Active |
| US7718989B2 | Resistor random access memory cell device | Electricity | 12 | Active |
| US7053406B1 | One-time programmable read only memory and manufacturing method thereof | Electricity | 10 | Expired |
| US8080440B2 | Resistor random access memory cell with L-shaped electrode | Electricity | 10 | Active |
| US7755153B2 | Structure and method for a magnetic memory device with proximity writing | Electricity | 9 | Active |
| US7554144B2 | Memory device and manufacturing method | Electricity | 8 | Active |
| US7741636B2 | Programmable resistive RAM and manufacturing method | Electricity | 8 | Active |
| US8067762B2 | Resistance random access memory structure for enhanced retention | Electricity | 8 | Active |
| US7924600B2 | Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | Physics | 7 | Active |
| US7527985B2 | Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas | Electricity | 7 | Active |
| US7728384B2 | Magnetic random access memory using single crystal self-aligned diode | Electricity | 7 | Active |
| US7667220B2 | Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.