Patent · US Expired

Self-biasing transistor structure and an SRAM cell having less than six transistors

US7442971B2 · kind B2 · utility

126Cited by

9References

25Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Frank Wirbeleit · Dresden, DE
Manfred Horstmann · Dresden, DE
Christian Hobert · Pirna, DE

Key dates

Filing date	Jan 28, 2005
Grant date	Oct 28, 2008
Priority date	—
Expiry date	Oct 29, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/637
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.