Capacitor having reaction preventing layer and methods of forming the same
US7442982B2 · kind B2 · utility
3Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Feb 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another, forming a reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride. A high-k dielectric film and an upper electrode are formed on the reaction preventing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.