Thin silicon based substrate
US7443030B2 · kind B2 · utility
12Cited by
33References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jun 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.