Methods of forming a plurality of capacitors
US7445990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Apr 30, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2933
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.