Micro defects in semi-conductors
US7446868B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Oct 11, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/6489
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 104-109 w/cm2 with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.