Patent · US Active

Memory device and method for operating such a memory device

US7447053B2 · kind B2 · utility

2Cited by

4References

28Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Corvin Liaw · Birkenfeld, DE
Heinz Hoenigschmid · Starnberg, DE

Key dates

Filing date	Mar 7, 2006
Grant date	Nov 4, 2008
Priority date	—
Expiry date	Jun 9, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device and method for operating a memory device is described. In one embodiment, the memory device has at least one memory cell including an active material, a current supply line, and a first switching device for switching a first current from the current supply line through the active material. The memory cell additionally includes at least one further switching device for switching a further current from the current supply line through the active material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.