MRAM Memory conditioning

US7447060B2 · kind B2 · utility

Assignee

• Everspin Technologies, Inc. · US

Inventors

• Eric J. Salter · Scottsdale, US
• Mark Deherrera · Tempe, US
• Thomas H. Lee · Cupertino, US

Key dates

• Filing date: Feb 23, 2007
• Grant date: Nov 4, 2008
• Expiry date: Mar 9, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

According to an example embodiment, a method (500) includes applying a magnetic field to an array of Magnetic Tunnel Junction (MTJ) bits, a magnitude of the magnetic field sufficient to eliminate a stuck-at-mid condition exhibited by one of the MTJ bits without causing other ones of the MTJ bits to develop the stuck-at-mid condition.