Patent · US Active

Method for handling a defective top gate of a source-side injection flash memory array

US7447073B2 · kind B2 · utility

5Cited by

13References

20Claims

0Family size

Assignee

Silicon Storage Technology, Inc. · US

Inventors

Hieu Van Tran · San Jose, US
Hung Quoc Nguyen · Carrollton, US
Anh Ly · San Jose, US
Sheng-Hsiung Hsueh · San Jose, US
Sang Thanh Nguyen · Union City, US
Loc B. Hoang · San Jose, US
Steve Choi · Irvine, US
Thuan Vu · San Jose, US

Key dates

Filing date	Feb 16, 2007
Grant date	Nov 4, 2008
Priority date	—
Expiry date	Feb 16, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/832
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.