Method for fabricating a semiconductor structure

US7449389B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Meister · Taufkirchen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
• Josef Bock · Birkenfeld, DE
• Rudolf Lachner · Ingolstadt, DE

Key dates

• Filing date: Oct 27, 2006
• Grant date: Nov 11, 2008
• Expiry date: Oct 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/617

Abstract

A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the first epitaxial layer, including configuring the physical dimensions of a first active zone of the first component region independent of a second active zone of the second component region via the first epitaxial layer and the second epitaxial layer. In one embodiment, the first component is a radio-frequency transistor and the second component is a varactor.