Apparatus and plasma ashing process for increasing photoresist removal rate
US7449416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Apr 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.