Memory device with active layer of dendrimeric material
US7449742B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Feb 15, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31855
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.