William Leonard
6Patents
2h-index
13Co-inventors
37Inventor score
Filing activity: Nov 12, 2004 → Dec 20, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7232765B1 | Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures | Electricity | 5 | Expired |
| US7105374B1 | Memory cell containing copolymer containing diarylacetylene portion | Electricity | 3 | Expired |
| US7449742B2 | Memory device with active layer of dendrimeric material | Emerging Cross-Sectional Technologies | 2 | Active |
| US7344913B1 | Spin on memory cell active layer doped with metal ions | Electricity | 1 | Expired |
| US7777218B1 | Memory cell containing copolymer containing diarylacetylene portion | Electricity | 0 | Active |
| US7632706B2 | System and method for processing an organic memory cell | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.