Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7452824B2 · kind B2 · utility
1Cited by
130References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2006 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Dec 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The chamber parameters are selected from a group including source power, bias power, chamber pressure, magnetic coil current in different magnetic coils, gas flow rates in different gas injection zones and species composition of the gas in different gas injection zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.