Ion implanter with ionization chamber electrode design
US7453074B2 · kind B2 · utility
2Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Dec 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.