Semiconductor constructions

US7453103B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Todd R. Abbott · Boise, US
• H. Montgomery Manning · Eagle, US

Key dates

• Filing date: Nov 22, 2005
• Grant date: Nov 18, 2008
• Expiry date: Jan 30, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/488

Abstract

The invention includes semiconductor structures having buried silicide-containing bitlines. Vertical surround gate transistor structures can be formed over the bitlines. The surround gate transistor structures can be incorporated into memory devices, such as, for example, DRAM devices. The invention can be utilized for forming 4F2 DRAM devices.