Todd R. Abbott
53Patents
12h-index
20Co-inventors
80Inventor score
Filing activity: Sep 26, 1996 → Sep 19, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7365385B2 | DRAM layout with vertical FETs and method of formation | Electricity | 126 | Expired |
| US7262089B2 | Methods of forming semiconductor structures | Electricity | 89 | Expired |
| US7518182B2 | DRAM layout with vertical FETs and method of formation | Emerging Cross-Sectional Technologies | 65 | Expired |
| US7736969B2 | DRAM layout with vertical FETS and method of formation | Emerging Cross-Sectional Technologies | 35 | Active |
| US6599789B1 | Method of forming a field effect transistor | Electricity | 34 | Expired |
| US8482047B2 | DRAM layout with vertical FETS and method of formation | Emerging Cross-Sectional Technologies | 18 | Active |
| US7453103B2 | Semiconductor constructions | Electricity | 17 | Active |
| US8274106B2 | DRAM layout with vertical FETs and method of formation | Emerging Cross-Sectional Technologies | 17 | Active |
| US7348236B2 | Formation of memory cells and select gates of NAND memory arrays | Electricity | 16 | Expired |
| US6727168B2 | Method of forming local interconnects | Electricity | 15 | Expired |
| US6812529B2 | Suppression of cross diffusion and gate depletion | Electricity | 14 | Expired |
| US7012024B2 | Methods of forming a transistor with an integrated metal silicide gate electrode | Electricity | 13 | Expired |
| US6376358B1 | Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applications | Electricity | 12 | Expired |
| US7560336B2 | DRAM layout with vertical FETs and method of formation | Electricity | 12 | Active |
| US6583518B2 | Cross-diffusion resistant dual-polycide semiconductor structure and method | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6723597B2 | Method of using high-k dielectric materials to reduce soft errors in SRAM memory cells, and a device comprising same | Electricity | 11 | Expired |
| US7768051B2 | DRAM including a vertical surround gate transistor | Electricity | 11 | Expired |
| US7982255B2 | Flash memory with recessed floating gate | Electricity | 10 | Active |
| US6677650B2 | Silicon plugs and local interconnect for embedded memory and system-on-chip (SOC) applications | Electricity | 8 | Expired |
| US8389360B2 | DRAM layout with vertical FETs and method of formation | Electricity | 8 | Active |
| US7989866B2 | DRAM layout with vertical FETS and method of formation | Emerging Cross-Sectional Technologies | 8 | Active |
| US7342272B2 | Flash memory with recessed floating gate | Electricity | 8 | Expired |
| US7566620B2 | DRAM including a vertical surround gate transistor | Electricity | 7 | Active |
| US6987291B2 | Integrated transistor circuitry | Electricity | 7 | Expired |
| US7153731B2 | Method of forming a field effect transistor with halo implant regions | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.