Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
US7453119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2006 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Jul 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.