Inventor · Sunnyvale, CA, US

Sik Lui

133Patents
20h-index
49Co-inventors
90Inventor score

Filing activity: Apr 28, 1992 → Jan 21, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8119482B2 MOSFET using gate work function engineering for switching applications Electricity 123 Active
US6838722B2 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 65 Expired
US7005347B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 46 Expired
US7453119B2 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Electricity 37 Active
US6509233B2 Method of making trench-gated MOSFET having cesium gate oxide layer Electricity 35 Expired
US7335946B1 Structures of and methods of fabricating trench-gated MIS devices Emerging Cross-Sectional Technologies 33 Expired
US7285822B2 Power MOS device Electricity 32 Expired
US8753935B1 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 29 Active
US8431470B2 Approach to integrate Schottky in MOSFET Electricity 28 Active
US7208818B2 Power semiconductor package Electricity 27 Expired
US8809948B1 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 24 Active
US7436022B2 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout Electricity 23 Active
US7605425B2 Power MOS device Electricity 22 Active
US8431989B2 Shielded gate trench (SGT) MOSFET devices and manufacturing processes Electricity 22 Active
US7745878B2 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Electricity 22 Active
US8951867B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 21 Active
US5514980A High resolution circuit and method for sensing antifuses Physics 21 Expired
US9190512B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 20 Active
US7183616B2 High speed switching MOSFETS using multi-parallel die packages with/without special leadframes Electricity 20 Expired
US6538300B1 Precision high-frequency capacitor formed on semiconductor substrate Electricity 20 Expired
US8394702B2 Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process Electricity 20 Active
US8946816B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 19 Active
US5838624A Circuits for improving the reliability of antifuses in integrated circuits Physics 19 Expired
US6841852B2 Integrated circuit package for semiconductor devices with improved electric resistance and inductance Electricity 19 Expired
US9136380B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 18 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.