Planarization method for multi-layer lithography processing
US7455955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2003 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.