Method for forming a strongly-conductive buried layer in a semiconductor substrate
US7456071B2 · kind B2 · utility
5Cited by
16References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2005 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | May 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
An integrated circuit including a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.