Patent · US Active

Semiconductor having structure with openings

US7456086B2 · kind B2 · utility

1Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Stefan Tegen · Dresden, DE

Key dates

Filing date	Mar 31, 2006
Grant date	Nov 25, 2008
Priority date	—
Expiry date	Aug 5, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/033
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing an insulation structure with openings of a low aspect ratio is disclosed. In one embodiment, a dopant is introduced into the insulation structure with a concentration which on average increases or decreases in the vertical direction from a pre-processed semiconductor surface, the openings are formed in a dry-etching step and the aspect ratio of the openings is reduced by increasing the basic surface area of the openings using a subsequent wet-chemical etching step.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.