Semiconductor device and method of manufacturing the same
US7456091B2 · kind B2 · utility
107Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Mar 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20752
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.