Memory cell programmed using a temperature controlled set pulse
US7457146B2 · kind B2 · utility
11Cited by
12References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Jun 19, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set pulse to the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.