Method for thin film deposition using multi-tray film precursor evaporation system
US7459396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Mar 6, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.