Avalanche photodiode
US7462889B2 · kind B2 · utility
8Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jul 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the periphery of the ring-shaped trench 13 surrounding the light receiving region, a first semiconductor layer lying just under the first electrode 11, and a second semiconductor layer lying just under the second electrode 12. Conductivity types of the first semiconductor and the second semiconductor are identical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.