High-bandwidth magnetoresistive random access memory devices
US7463510B2 · kind B2 · utility
4Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jun 10, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.