Resist material, resist pattern and forming method for the same, and a semiconductor device and manufacturing method for the same
US7465527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.