Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

US7465967B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Richard Peter Smith · Carrboro, US
• Scott Sheppard · Chapel Hill, US
• Adam William Saxler · Durham, US
• Yifeng Wu · Goleta, US

Key dates

• Filing date: Mar 15, 2005
• Grant date: Dec 16, 2008
• Expiry date: Apr 8, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.