Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US7465976B2 · kind B2 · utility
19Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | May 31, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.