III-nitride bidirectional switch
US7465997B2 · kind B2 · utility
45Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Feb 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A III-nitride bidirectional switch which includes an AlGaN/GaN interface that obtains a high current currying channel. The bidirectional switch operates with at least one gate that prevents or permits the establishment of a two dimensional electron gas to form the current carrying channel for the bidirectional switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.