Diode structure to suppress parasitic current
US7466004B2 · kind B2 · utility
1Cited by
0References
19Claims
0Family size
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Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A diode conducts current between an anode terminal and a cathode terminal. The diode includes a parasitic transistor formed between one of the terminals and the substrate. The diode also includes a second transistor that competes with the parasitic transistor to direct current flow between the anode terminal and the cathode terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.